M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 49

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 15. Synchronous burst read - continuous - valid data ready output
1. Valid Data Ready = Valid Low during valid clock edge.
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 M
Figure 16. Synchronous burst read - burst address advance
typically 300 k
that valid data is available on the next valid clock edge.
K
ADD
L
ADD
G
B
K
Output
R
(1)
for a single memory on the R bus, should be used to give the data valid set up time required to recognize
VALID
V
V
tGLQV
V
tRLKH
tBLKH
The internal timing of R follows DQ. An external resistor,
Q0
(2)
V
Q1
tBHKH
V
Q2
DC and AC parameters
AI03649
AI03650
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