MC9S08SH4CTJ Freescale Semiconductor, MC9S08SH4CTJ Datasheet - Page 315

• Manufacturer Part Number: MC9S08SH4CTJ
• Description: IC MCU 8BIT 4K FLASH 20-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08SH4CTJ

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 17
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP
• Processor Series: S08SH
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 17
• Number Of Timers: 3
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO, DEMO9S08SH32, DEMO9S08SH8
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12-ch x 10-bit
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Height: 1.05 mm
• Length: 6.6 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 4.5 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
Num
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
The frequency of this clock is controlled by a software setting.
1
2
3
5
6
7
8
9
4
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to +125°C
Characteristic
4
2
2
MC9S08SH8 MCU Series Data Sheet, Rev. 3
Table A-16. FLASH Characteristics
1
FCLK
3
)
2
2
V
Symbol
prog/erase
V
n
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
FLPE
Read
10,000
150
Min
2.7
2.7
15
—
5
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
9
4
6.67
Max
200
5.5
5.5
—
—
—
DD
cycles
years
supply.
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
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