DSPIC30F6011-30I/PF Microchip Technology, DSPIC30F6011-30I/PF Datasheet - Page 56

• Manufacturer Part Number: DSPIC30F6011-30I/PF
• Description: IC DSPIC MCU/DSP 132K 64TQFP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F6011-30I/PF

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 52
• Program Memory Size: 132KB (44K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TQFP, 64-VQFP
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 52
• Flash Memory Size: 132KB
• Supply Voltage Range: 2.5V To 5.5V
• Package: 64TQFP
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 30 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 52
• Interface Type: 3-Wire/CAN/I2C/SPI/UART
• On-chip Adc: 16-chx12-bit
• Number Of Timers: 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT64PT4 - SOCKET TRAN ICE 64MQFP/TQFPAC164313 - MODULE SKT FOR PM3 64PFAC30F002 - MODULE SOCKET DSPIC30F 64TQFPDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F601130IPF

dsPIC30F6011/6012/6013/6014
6.6.3
Example 6-2 shows a sequence of instructions that can
be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the table pointer.
EXAMPLE 6-2:
6.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
EXAMPLE 6-3:
DS70117F-page 54
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In Example 6-2, the contents of the upper byte of W3 has no effect.
2nd_program_word
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
LOADING WRITE LATCHES
INITIATING THE PROGRAMMING
SEQUENCE
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
,
,
LOADING WRITE LATCHES
,
,
,
,
,
,
,
,
,
INITIATING A PROGRAMMING SEQUENCE
NVMKEY
NVMKEY
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
[W0]
[W0++]
[W0]
[W0++]
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs.
© 2006 Microchip Technology Inc.