DF36912GFH Renesas Electronics America, DF36912GFH Datasheet - Page 360
DF36912GFH
Manufacturer Part Number
DF36912GFH
Description
MCU 3/5V 8K 32-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet
1.DF36912GFHV.pdf
(442 pages)
Specifications of DF36912GFH
Core Processor
H8/300H
Core Size
16-Bit
Speed
12MHz
Connectivity
I²C, SCI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
32-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Manufacturer
Quantity
Price
Company:
Part Number:
DF36912GFH
Manufacturer:
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Quantity:
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Company:
Part Number:
DF36912GFHV
Manufacturer:
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Quantity:
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Section 20 Electrical Characteristics
Item
Erase
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Rev. 3.00 Sep. 14, 2006 Page 330 of 408
REJ09B0105-0300
2. The programming time for 64 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
erase count (N)
does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit
clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV
bit clear*
Wait time after SWE
bit clear*
Maximum erase
count*
1
7
1
n
n
1
*
1
*
6
1
1
1
*
6
6
1000
7
1
1
1
1
z1 = 30 µs
z2 = 200 µs
E
Symbol
x
y
z
N
(max.)) = wait time after E bit setting (z)
P
(max.)) = wait time after P bit setting (z)
Test
Condition
E
(max.)).
Min.
1
100
10
10
10
20
2
4
100
—
Values
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
—
—
100
—
—
—
—
—
—
120
maximum
P
(max.)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
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