R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 269

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
φ
Address bus
RASn (CSn)
UCAS, LCAS
RD
OE
Data bus
Note: n = 2 to 5
Note, however, that the RAS signal will go high if:
⎯ a refresh operation is initiated in the RAS down state
⎯ self-refreshing is performed
⎯ the chip enters software standby mode
⎯ the external bus is released
⎯ the RCDM bit or BE bit is cleared to 0
If a transition is made to the all-module-clocks-stopped mode in the RAS down state, the clock
will stop with RAS low. To enter the all-module-clocks-stopped mode with RAS high, the
RCDM bit must be cleared to 0 before executing the SLEEP instruction.
Figure 6.44 Example of Operation Timing in RAS Down Mode
T
Row address
p
DRAM space read
T
r
(RAST = 0, CAST = 0)
Column address 1
T
c1
T
c2
External address
Normal space
T
1
read
T
2
Section 6 Bus Controller (BSC)
Column address 2
DRAM space
T
c1
read
Page 239 of 1372
T
c2