R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 286

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.8.7
CAS latency is controlled by settings of the W22 to W20 bits of WTCRB. Set the CAS latency
count, as shown in table 6.11, by the setting of synchronous DRAM. Depending on the setting, the
CAS latency control cycle (T
AST2 bit of ASTCR. Figure 6.57 shows the CAS latency control timing when synchronous
DRAM of CAS latency 3 is connected.
The initial value of W22 to W20 is H'7. Set the register according to the CAS latency of
synchronous DRAM to be connected.
Table 6.11 Setting CAS Latency
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W22
0
1
CAS Latency Control
W21
0
1
0
1
W20
0
1
0
1
0
1
0
1
c1
) is inserted. WTCRB can be set regardless of the setting of the
Connect synchronous DRAM of CAS
latency 1
Connect synchronous DRAM of CAS
latency 2
Connect synchronous DRAM of CAS
latency 3
Connect synchronous DRAM of CAS
latency 4
Reserved (must not be used)
Reserved (must not be used)
Reserved (must not be used)
Reserved (must not be used)
Description
H8S/2426, H8S/2426R, H8S/2424 Group
CAS Latency Control
Cycle Inserted
0 state
1 state
2 states
3 states
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⎯
⎯
⎯
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010