R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 275

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
(2)
A self-refresh mode (battery backup mode) is provided for DRAM as a kind of standby mode. In
this mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and SLFRF bit to 1 in REFCR. When a SLEEP
instruction is executed to enter software standby mode, the CAS and RAS signals are output and
DRAM enters self-refresh mode, as shown in figure 6.51.
When software standby mode is exited, the SLFRF bit is cleared to 0 and self-refresh mode is
exited automatically. If a CBR refresh request occurs when making a transition to software
standby mode, CBR refreshing is executed, and then self-refresh mode is entered.
When using self-refresh mode, the OPE bit must not be cleared to 0 in the SBYCR register.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
φ
CSn (RASn)
UCAS, LCAS
HWR (WE)
Note: n = 2 to 5
Self-Refreshing
T
Rp
Figure 6.51 Self-Refresh Timing
T
Rr
High
Software
standby
Section 6 Bus Controller (BSC)
T
Rc3
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