R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 291

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
6.8.10
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.60 shows the write access timing when the CAS
latency control cycle is disabled.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Figure 6.60 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
DQMU, DQML
Precharge-sel
Address bus
Bus Cycle Control in Write Cycle
SDRAMφ
Data bus
CKE
RAS
CAS
WE
φ
Column address
PALL
T
p
Row address
Row address
(SDWCD = 1)
ACTV
T
r
High
NOP
T
c1
Column address
Section 6 Bus Controller (BSC)
T
WRIT
c2
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