HD64F3067RF20 Renesas Electronics America, HD64F3067RF20 Datasheet - Page 683

• Manufacturer Part Number: HD64F3067RF20
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3067RF20

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 7
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

(4) Do not input a constant high level to the FWE pin.
(5) Program/erase the flash memory in accordance with the recommended algorithms.
(6) Do not set/clear the SWE bit while a program is executing on flash memory.
To prevent erroneous programming/erasing in the event of program runaway, etc., input a high
level to the FWE pin only when programming/erasing flash memory (including flash memory
emulation by RAM). Avoid system configurations that constantly input a high level to the
FWE pin. Handle program runaway, etc. by starting the watchdog timer so that flash memory
is not overprogrammed/overerased even while a high level is input to the FWE pin.
The recommended algorithms can program/erase the flash memory without applying voltage
stress to the device or sacrificing the reliability of the program data.
When setting the PSU and ESU bits in FLMCR, set the watchdog timer for program runaway,
etc.
Before performing flash memory program execution or data read, clear the SWE bit.
If the SWE bit is set, the flash data can be reprogrammed, but flash memory cannot be
accessed for purposes other than verify (verify during programming/erase).
Similarly perform flash memory program execution and data read after clearing the SWE bit
even when using the RAM emulation function with a high level input to the FWE pin.
However, RAM area that overlaps flash memory space can be read/programmed whether the
SWE bit is set or cleared.
In the boot mode, perform FWE pin High/Low switching during reset.
In the user program mode, FWE=High/Low switching is possible regardless of the RES
Apply an input to FWE when the program is not running away.
Input low level to the FWE pin when the SWE, ESU, PSU, EV, PV, E, and P bits in
In transition to the boot mode, input FWE=High level and set MD
RES input is low. At this time, the FWE and MD
programming setup time (t
setup time is necessary for RES reset timing even in transition from the boot mode to
another mode.
In reset during operation, the RES pin must be held at a low level for at least 20 system
clocks.
FWE input switching is also possible during program execution on flash memory.
When applying an input to the FWE pin, the program execution state must be
supervised using a watchdog timer, etc.
Do not erroneously set the SWE, ESU, PSU, EV, PV, E, and P bits when FWE
High/Low.
input.
FLMCR have been cleared.
MDS
) relative to the reset clear timing. The mode programming
Rev. 4.00 Jan 26, 2006 page 659 of 938
2
to MD
0
inputs must satisfy the mode
2
to MD
REJ09B0276-0400
Section 18 ROM
0
while the