HD64F2134FA20 Renesas Electronics America, HD64F2134FA20 Datasheet - Page 14

• Manufacturer Part Number: HD64F2134FA20
• Description: IC H8S MCU FLASH 128K 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of HD64F2134FA20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Rev. 4.00 Jun 06, 2006 page xii of liv
25.3.2 DC
Characteristics
Table 25.16 DC
Characteristics (3)
25.3.6 Flash Memory
Characteristics
Table 25.27 Flash
Memory Characteristics
(Programming/Erasing
Operating Range)
25.4.2 DC
Characteristics
Table 25.29 DC
Characteristics (1)
Table 25.29 DC
Characteristics (3)
25.5.2 DC
Characteristics
Table 25.40 DC
Characteristics (1)
Item
740
742
756
757
761
766
782
Page
Table 25.16 (3) amended
Note *4 amended
Note: 4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull
outputs in H8S/2138. ... P52/SCK0 and P97 (ICE = 0) high
levels are driven by NMOS in H8S/2138.
Table 25.27 amended
Notes 8 to 10 added
Notes: 8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee
range is 1 to minimum value).
9. Reference value for 25C (as a guide line, rewriting should
normally function up to this value).
10. Data retention characteristics when rewriting is performed
within the specification range, including the minimum value.
Table 25.29 (1) amended
Note *5 added to test conditions for input pull-up MOS current
V
Table 25.40 (1) amended
Revision (See Manual for Details)
Item
Reprogramming count
Data retention time *
Item
Output high
voltage
Item
Three-state
leakage
current
(off state)
Input pull-up
MOS current
Item
Input
pull-up
MOS
current
in
= 0 V, V
All output pins
(except P97, and
P52 *
P97, P52 *
Ports 1 to 3
Port 6
Ports 1 to 6, 8, 9
Ports 1 to 3
Port 6
CC
10
4
) *
5
= 2.7 V *
4
5
to 3.6 V
Symbol Min
V
Symbol Min
–I
Symbol Min
–I
OH
P
I
TSI
P
Symbol Min
N
t
DRP
WEC
V
V
0.5
—
50
60
30
60
CC
CC
–0.5
–1.0
100 *
10
8
Typ
—
—
—
Typ
—
—
Typ Max
—
—
—
Typ
10000 *
—
—
—
—
Max
1.0
300
500
Max
300
600
9
Max
—
—
Unit
V
V
V
Unit
Times
Years
Unit
µA
µA
µA
Unit
µA
µA
Test
Conditions
I
I
I
V = 2.7 to
3.5 V
OH
OH
OH
CC
Test
Conditions
V
= 5 V 10%
Test
Conditions
V
V
V = 0 V, V
= 5 V 10%
= –200 µA
= –1 mA
= –200 µA,
in
CC
in
in
Test
Condition
= 0 V, V
= 0.5 to
–0.5 V
CC
CC