HD64F2134FA20 Renesas Electronics America, HD64F2134FA20 Datasheet - Page 823

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HD64F2134FA20

Manufacturer Part Number
HD64F2134FA20
Description
IC H8S MCU FLASH 128K 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of HD64F2134FA20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Part Number:
HD64F2134FA20
Manufacturer:
Renesas Electronics America
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10 000
Part Number:
HD64F2134FA20V
Manufacturer:
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4. The upper limit of the port 6 applied voltage is V
5. For flash memory program/erase operations, the applicable ranges are V
6. Current dissipation values are for V
7. The values are for V
selected, and the lower of V
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
3.6 V, T
higher.
output pins unloaded and the on-chip pull-up MOSs in the off state.
version), V
a
= 0 to +75°C. For the F-ZTAT versions, the test condition is V
IH
min = V
CC
RAM
0.9, and V
V
CC
CC
< 2.7 V (mask ROM version), V
+0.3 V and AV
IL
IH
max = 0.3 V.
min = V
CC
CC
Rev. 4.00 Jun 06, 2006 page 767 of 1004
+0.3 V when CIN input is selected.
–0.5 V and V
CC
+0.3 V when CIN input is not
Section 25 Electrical Characteristics
IL
RAM
max = 0.5 V with all
V
CC
REJ09B0301-0400
< 3.0 V (F-ZTAT
CC
= 3.0 V or
CC
= 3.0 V to

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