S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 56

• Manufacturer Part Number: S29GL256P11TFI010
• Description: Flash 3V 256Mb Mirrorbit highest address110ns
• Manufacturer: Spansion Inc.

Specifications of S29GL256P11TFI010

• Memory Type: NOR
• Memory Size: 256 Mbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
6. Write Cycle Time = Access Time at V
54
t
t
JEDEC
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
WHDX
GHWL
WHEH
WLWH
WLAX
DVWH
WHDL
AVWL
ELWL
11.7.3
AVAV
V
IO
Parameter
= V
Section 11.6
CC
t
t
WHWH1
WHWH2
t
t
= 2.7 V. AC specifications for 110 ns speed options are tested with V
t
t
GHWL
t
t
CEPH
OEPH
t
t
Std.
t
BUSY
t
t
t
WPH
t
ASO
t
AHT
t
t
t
t
VHH
VCS
SEA
WC
WP
DH
CH
AS
AH
DS
CS
S29GL-P Erase and Program Operations
for more information.
Description
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
V
V
Erase/Program Valid to RY/BY# Delay
Command Cycle Timout
HH
CC
RESET#
Rise and Fall Time
Setup Time
CE#
V
V
CC
IO
CC
.
(Note 1)
(Note 1)
V
V
CC
IO
(Note 2)
Table 11.6 S29GL-P Erase and Program Operations
min
min
(Note 2)
(Note 1)
D a t a
S29GL-P MirrorBit
Figure 11.8 Power-up Sequence Timings
S h e e t
(Note 2)
t
VCS
t
VIOS
( A d v a n c e
IO
TM
= 1.8 V and V
Flash Family
Per Word
Per Word
Word
Word
CC
= 3.0 V.
t
I n f o r m a t i o n )
RH
Unit
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Min
Min
(Note 6)
110
110
Speed Options
S29GL-P_00_A3 November 21, 2006
13.5
120
120
480
250
0.5
20
20
35
50
15
45
45
30
15
60
54
35
90
0
0
0
0
0
0
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
µs
ns
µs