S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 60

• Manufacturer Part Number: S29GL256P11TFI010
• Description: Flash 3V 256Mb Mirrorbit highest address110ns
• Manufacturer: Spansion Inc.

Specifications of S29GL256P11TFI010

• Memory Type: NOR
• Memory Size: 256 Mbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
6. Write Cycle Time = Access Time at V
58
t
t
JEDEC
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
EHWH
11.7.4
AVWL
DVEH
EHDX
GHEL
WLEL
AVAV
ELAX
ELEH
EHEL
Parameter
t
t
WHWH1
WHWH2
t
t
t
t
OEPH
t
Std.
t
CEPH
GHEL
t
t
t
ASO
t
t
t
t
CPH
t
AHT
WC
WH
WS
AS
AH
DS
DH
CP
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
CC
.
(Note 1)
(Note 2)
(Note 2)
D a t a
S29GL-P MirrorBit
S h e e t
IO
(Note 2)
= 1.8 V and V
( A d v a n c e
CC
TM
= 3.0 V
Flash Family
Word
Word
Word
Word
Per
Per
I n f o r m a t i o n )
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
(Note 6)
110
110
S29GL-P_00_A3 November 21, 2006
Speed Options
13.5
120
120
480
0.5
15
45
45
20
20
35
30
15
60
54
0
0
0
0
0
0
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs