BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 13

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214-500_2
Product data sheet
Fig 29. Output power as a function of input power;
Fig 31. Drain efficiency as a function of load power;
(W)
P
(%)
L
η
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
D
700
600
500
400
300
200
100
60
40
20
0
0
0
V
typical values
0
V
typical values
DS
DS
= 50 V; t
= 50 V; t
100
7.2.8 Performance curves measured with δ = 10 %, t
5
200
p
p
= 500 μs; δ = 20 %; I
= 500 μs; δ = 20 %; I
10
300
400
15
500
(1)
(2)
(3)
Dq
Dq
20
All information provided in this document is subject to legal disclaimers.
P
600
L
(3)
001aal706
001aal708
= 150 mA.
= 150 mA.
P
(2)
(W)
i
(1)
(W)
700
25
Rev. 02 — 1 April 2010
Fig 30. Power gain as a function of load power;
Fig 32. Power gain and drain efficiency as function of
(dB)
(dB)
G
G
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
p
p
20
16
12
20
18
16
14
12
10
8
4
0
1.15
0
V
typical values
V
frequency; typical values
DS
DS
= 50 V; t
= 50 V; t
100
LDMOS L-band radar power transistor
200
p
p
1.25
= 500 μs; δ = 20 %; I
= 500 μs; δ = 20 %; I
p
BLL6H1214-500
= 1 ms and T
300
400
η
G
D
p
(1)
(2)
(3)
1.35
500
© NXP B.V. 2010. All rights reserved.
f (GHz)
Dq
Dq
hs
P
L
600
001aal707
001aal709
= 150 mA.
= 150 mA.
(W)
= 65 °C
1.45
700
55
45
35
25
15
5
(%)
η
13 of 20
D