BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 8

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214-500_2
Product data sheet
Fig 11. Output power as a function of input power;
(W)
P
L
(1) T
(2) T
(3) T
700
600
500
400
300
200
100
0
0
V
f = 1300 MHz.
typical values
hs
hs
hs
DS
= −40 °C
= 25 °C
= 65°C
= 50 V; t
7.2.3 Performance curves measured with δ = 10 %, t
5
p
= 300 μs; δ = 10 %; I
10
Fig 13. Drain efficiency as a function of load power; typical values
(1) T
(2) T
(3) T
15
V
(1)
(2)
(3)
hs
hs
hs
DS
= −40 °C
= 25 °C
= 65°C
= 50 V; t
Dq
20
All information provided in this document is subject to legal disclaimers.
001aal688
= 150 mA;
P
i
(W)
p
= 300 μs; δ = 10 %; I
(%)
η
25
D
Rev. 02 — 1 April 2010
60
40
20
0
0
100
Fig 12. Power gain as a function of load power;
200
Dq
(dB)
G
(1) T
(2) T
(3) T
p
= 150 mA; f = 1300 MHz.
20
18
16
14
12
10
300
0
V
f = 1300 MHz.
typical values
hs
hs
hs
DS
= −40 °C
= 25 °C
= 65°C
400
= 50 V; t
100
LDMOS L-band radar power transistor
500
200
p
= 300 μs; δ = 10 %; I
p
P
BLL6H1214-500
600
L
= 300 μs and f = 1300 MHz
001aal690
300
(W)
(1)
(2)
(3)
(1)
(2)
(3)
700
400
500
© NXP B.V. 2010. All rights reserved.
Dq
P
L
600
001aal689
= 150 mA;
(W)
700
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