BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 17

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLL6H1214-500_2
Product data sheet
Document ID
BLL6H1214-500_2
Modifications:
BLL6H1214-500_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
SMD
L-band
VSWR
Release date
20100401
20090120
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The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The status of this data sheet has been changed to “Product data sheet”
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Abbreviations
Section 7.2.3 on page
Section 7.2.4 on page
Section 7.2.5 on page
Section 7.2.6 on page
Section 7.2.7 on page
Section 7.2.8 on page
Section 7.2.9 on page
All information provided in this document is subject to legal disclaimers.
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Long wave Band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 1 April 2010
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Change notice
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LDMOS L-band radar power transistor
BLL6H1214-500
Supersedes
BLL6H1214-500_1
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© NXP B.V. 2010. All rights reserved.
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