BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 2

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLL6H1214-500_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLL6H1214-500
Symbol
V
V
I
T
T
D
stg
j
DS
GS
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 02 — 1 April 2010
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
[1]
LDMOS L-band radar power transistor
Simplified outline
1
3
BLL6H1214-500
2
4
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
Max
100
+13
45
+150
200
Version
SOT539A
1
2
sym117
2 of 20
5
Unit
V
V
A
°C
°C