BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 7

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214-500_2
Product data sheet
Fig 7.
Fig 9.
(W)
(%)
η
P
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
D
700
600
500
400
300
200
100
L
60
40
20
0
0
0
V
Output power as a function of input power;
typical values
0
V
typical values
Drain efficiency as a function of load power;
DS
DS
= 50 V; t
= 50 V; t
100
7.2.2 Performance curves measured with δ = 10 %, t
200
p
p
= 300 μs; δ = 10 %; I
= 300 μs; δ = 10 %; I
6
300
400
(1)
(2)
(3)
(1)
(2)
(3)
12
500
Dq
Dq
P
All information provided in this document is subject to legal disclaimers.
P
i
001aak756
001aak758
600
L
(W)
= 100 mA.
= 100 mA.
(W)
700
18
Rev. 02 — 1 April 2010
Fig 8.
Fig 10. Power gain and drain efficiency as function of
(dB)
(dB)
G
G
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
p
p
18
12
20
18
16
14
12
10
6
0
1.15
0
V
Power gain as a function of load power;
typical values
P
I
frequency; typical values
Dq
DS
L
= 250 W; V
= 100 mA.
= 50 V; t
100
LDMOS L-band radar power transistor
200
p
1.25
DS
= 300 μs; δ = 10 %; I
p
BLL6H1214-500
= 300 μs and T
= 50 V; t
300
(1)
(2)
(3)
400
η
G
p
D
p
= 300 μs; δ = 10 %;
1.35
500
© NXP B.V. 2010. All rights reserved.
f (GHz)
Dq
P
001aak757
001aak759
L
600
= 100 mA.
hs
(W)
= 65 °C
1.45
700
55
45
35
25
15
5
(%)
η
D
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