BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 20

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . 15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Ruggedness in class-AB operation . . . . . . . . . 3
Performance curves measured with δ = 10 %,
t
Performance curves measured with δ = 10 %,
t
Performance curves measured with δ = 10 %,
t
Performance curves measured with δ = 20 %,
t
Performance curves measured with δ = 20 %,
t
Performance curves measured with δ = 20 %,
t
Performance curves measured with δ = 10 %,
t
Performance curves measured with δ = 10 %,
t
Performance curves measured with δ = 10 %,
t
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Impedance information . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
p
p
p
p
p
p
p
p
p
= 300 μs and T
= 300 μs and T
= 300 μs and f = 1300 MHz. . . . . . . . . . . . . . 8
= 500 μs and T
= 500 μs and T
= 500 μs and f = 1300 MHz. . . . . . . . . . . . . 11
= 1 ms and T
= 1 ms and T
= 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14
hs
hs
hs
hs
hs
hs
= 25 °C . . . . . . . . . . . . . . . . 12
= 65 °C . . . . . . . . . . . . . . . . 13
= 25 °C . . . . . . . . . . . . . . . 5
= 65 °C . . . . . . . . . . . . . . . 7
= 25 °C . . . . . . . . . . . . . . . 9
= 65 °C . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
LDMOS L-band radar power transistor
BLL6H1214-500
Document identifier: BLL6H1214-500_2
Date of release: 1 April 2010
All rights reserved.