BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 5

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214-500_2
Product data sheet
Fig 2.
(W)
P
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
700
600
500
400
300
200
100
L
0
0
V
Output power as a function of input power;
typical values
DS
= 50 V; t
7.2.1 Performance curves measured with δ = 10 %, t
7.2 RF performance
4
p
= 300 μs; δ = 10 %; I
8
(1)
(2)
(3)
(4)
(5)
12
Dq
All information provided in this document is subject to legal disclaimers.
001aak751
P
= 150 mA.
i
(W)
16
Rev. 02 — 1 April 2010
Fig 3.
(dB)
G
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
p
20
15
10
5
0
0
V
Power gain as a function of load power;
typical values
DS
= 50 V; t
100
LDMOS L-band radar power transistor
200
p
= 300 μs; δ = 10 %; I
p
BLL6H1214-500
= 300 μs and T
300
(1)
(2)
(3)
(4)
(5)
400
500
© NXP B.V. 2010. All rights reserved.
Dq
P
001aak752
L
600
= 150 mA.
hs
(W)
= 25 °C
700
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