BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 19

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLL6H1214-500_2
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
[e-mail]
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
LDMOS L-band radar power transistor
BLL6H1214-500
© NXP B.V. 2010. All rights reserved.
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