BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 6

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214-500_2
Product data sheet
Fig 4.
(%)
η
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
D
60
40
20
0
0
V
typical values
Drain efficiency as a function of load power;
DS
= 50 V; t
100
200
p
= 300 μs; δ = 10 %; I
Fig 6.
300
400
P
Input return loss as a function of frequency; typical value
L
500
= 500 W; V
Dq
All information provided in this document is subject to legal disclaimers.
(1)
(2)
(3)
(4)
(5)
P
001aak753
600
L
= 150 mA.
(W)
DS
RL
(dB)
700
−10
−15
−20
−25
= 50 V; t
in
Rev. 02 — 1 April 2010
−5
0
1175
p
= 300 μs; δ = 10 %; I
1225
Fig 5.
(dB)
G
1275
p
20
18
16
14
12
10
1175
V
Power gain and drain efficiency as function of
frequency; typical values
DS
= 50 V; t
1325
Dq
LDMOS L-band radar power transistor
1225
= 150 mA.
p
1375
= 300 μs; δ = 10 %; I
BLL6H1214-500
1275
001aak755
f (MHz)
η
G
D
p
1425
1325
1375
© NXP B.V. 2010. All rights reserved.
Dq
001aak754
f (MHz)
= 150 mA.
1425
60
50
40
30
20
10
(%)
η
D
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