BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 4

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Application information
BLL6H1214-500_2
Product data sheet
7.1 Impedance information
Table 8.
Typical values per section unless otherwise specified.
f
GHz
1.2
1.3
1.4
Fig 1.
Definition of transistor impedance
Typical impedance
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
Z
Ω
1.268 − j2.623
2.193 − j2.457
2.359 − j2.052
S
gate
Z
S
001aaf059
LDMOS L-band radar power transistor
Z
drain
L
BLL6H1214-500
Z
Ω
2.987 − j1.664
2.162 − j1.326
1.604 − j1.887
L
© NXP B.V. 2010. All rights reserved.
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