BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 15

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
BLL6H1214-500_2
Product data sheet
Fig 36. Component layout for class-AB production test circuit
Printed-Circuit Board (PCB): Duroid 6006; ε
See
C1
Table 9
C2
C6
for a list of components.
R1
Table 9.
For test circuit see
[1]
[2]
[3]
Component
C1
C2
C3, C4
C5, C11, C12
C6
C7, C8, C10
C9
C13
R1
R2
C3 C4
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
C5
List of components
R2
All information provided in this document is subject to legal disclaimers.
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
metal film resistor
r
= 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm.
36.
Rev. 02 — 1 April 2010
LDMOS L-band radar power transistor
C8
BLL6H1214-500
51 pF
100 pF
1 nf
47 pF
51 pF
100 pF
10 μF; 63 V
Value
22 μF; 35 V
56 Ω
51 Ω
C9
C10
C11
C7
© NXP B.V. 2010. All rights reserved.
C12
[1]
[1]
[2]
[1]
[3]
[3]
001aaj490
Remarks
0603
C13
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