BLL6H1214-500 NXP Semiconductors, BLL6H1214-500 Datasheet - Page 3

• Manufacturer Part Number: BLL6H1214-500
• Description: LDMOS,RF,500W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 45A
• Operating Frequency Range: 1.03GHz To 1.09GHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLL6H1214-500_2
Product data sheet
6.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
The BLL6H1214-500 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
P
η
P
t
t
Dq
DSS
DSX
GSS
r
f
j
case
fs
th(j-c)
D
(BR)DSS
GS(th)
L
DS
L(1dB)
droop(pulse)
DS(on)
p
= 25
in
= 150 mA; P
= 25
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
°
Parameter
transient thermal impedance from
junction to case
C; unless otherwise specified, in a class-AB production test circuit.
Thermal characteristics
DC characteristics
RF characteristics
Parameter
output power
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
L
= 500 W; t
Rev. 02 — 1 April 2010
p
p
= 300 μs; δ = 10 %.
= 300
μ
s;
δ
= 10 %; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 9.5 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
T
LDMOS L-band radar power transistor
case
t
t
t
t
p
p
p
p
D
DS
= 100 μs; δ = 10 %
= 200 μs; δ = 10 %
= 300 μs; δ = 10 %
= 100 μs; δ = 20 %
D
D
Conditions
P
P
P
P
P
P
P
= 2.7 mA
+ 3.75 V;
+ 3.75 V;
DS
= 85 °C; P
= 270 mA
= 270 mA
L
L
L
L
L
L
L
= 50 V
= 500 W
= 500 W
= 500 W
= 500 W
= 500 W
= 500 W
= 500 W
= 0 V
BLL6H1214-500
L
= 500 W
Min
100
1.3
-
32
-
1.7
-
DS
Min Typ Max Unit
500 -
-
15
-
-
45
-
-
-
DS
= 50 V; I
= 50 V;
© NXP B.V. 2010. All rights reserved.
Typ
-
1.8
-
42
-
3
100
-
17
10
600 -
50
0
20
6
Dq
Typ
0.07
0.08
0.1
0.1
-
50
-
-
-
0.3
50
50
Max Unit
-
2.2
1.4
-
140 nA
-
164 mΩ
= 150 mA;
3 of 20
Unit
K/W
K/W
K/W
K/W
W
V
dB
dB
W
%
dB
ns
ns
V
V
μA
A
S