FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 2

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDH3632
FDB3632
FDP3632
FDI3632
J
= 25°C, L = 0.12mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
Parameter
= 75A, V
FDB3632
FDP3632
FDH3632
FDI3632
Device
DD
= 80V.
T
C
= 25°C unless otherwise noted
(V
GS
TO-263AB
TO-220AB
TO-262AB
Package
TO-247
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
GS
GS
DS
GS
DS
DD
GS
=80A, V
=80A, V
= 250µA, V
=40A, V
= 80A
= 40A
= 75A, dI
= 75A, dI
= 80V
= 0V
= ±20V
= 25V, V
= 0V to 10V
= 0V to 2V
= V
= 50V, I
= 10V, R
Test Conditions
DS
GS
GS
GS
, I
D
D
=10V
=10V, T
SD
SD
GS
GS
GS
= 6V,
= 80A
= 250µA
Reel Size
/dt= 100A/µs
/dt= 100A/µs
330mm
= 0V,
= 0V
= 3.6Ω
Tube
Tube
Tube
T
V
I
I
D
g
C
DD
= 1.0mA
C
= 80A
= 150
=175
= 50V
o
o
C
C
Tape Width
Min
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
N/A
N/A
N/A
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
0.0075
0.009
0.018
6000
820
200
Typ
84
11
30
20
20
30
39
96
46
-
-
-
-
-
-
-
-
-
-
-
0.009
0.015
0.022
±100
Max
1.25
250
110
102
213
120
1.0
14
64
1
4
-
-
-
-
-
-
-
Quantity
800 units
-
-
-
-
50 units
30 units
50 units
Units
nA
nC
nC
nC
nC
nC
µA
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V