FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 8

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT FDB3632 2 1 3 ;
CA 12 8 1.7e-9
Cb 15 14 2.5e-9
Cin 6 8 6.0e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 102.5
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.61e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.7e-9
RLgate 1 9 56.1
RLdrain 2 5 10
RLsource 3 7 27
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.8e-3
Rgate 9 20 1.1
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 2.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*350),3))}
.MODEL DbodyMOD D (IS=5.9E-11 N=1.07 RS=2.3e-3 TRS1=3.0e-3 TRS2=1.0e-6
+ CJO=4e-9 M=0.58 TT=4.8e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=15e-10 IS=1.0e-30 N=10 M=0.6)
.MODEL MstroMOD NMOS (VTO=4.1 KP=200 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=3.4 KP=10.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1)
.MODEL MweakMOD NMOS (VTO=2.75 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1e+1 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.0e-3 TC2=-1.7e-6)
.MODEL RdrainMOD RES (TC1=8.5e-3 TC2=2.8e-5)
.MODEL RSLCMOD RES (TC1=2.0e-3 TC2=2.0e-6)
.MODEL RsourceMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-4.0e-3 TC2=-1.8e-5)
.MODEL RvtempMOD RES (TC1=-4.4e-3 TC2=2.2e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=0.4)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.4 VOFF=-0.8)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
rev May 2002
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
RSLC2
6
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3