FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 6

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01Ω
L
-
+
V
-
+
-
+
DD
V
V
DD
DD
0
0
0
Q
V
V
g(TH)
GS
DS
I
10%
V
g(REF)
Figure 16. Unclamped Energy Waveforms
0
0
DD
V
GS
Figure 20. Switching Time Waveforms
V
Figure 18. Gate Charge Waveforms
= 2V
GS
t
d(ON)
90%
Q
t
50%
ON
Q
gs
10%
gs2
t
r
I
AS
PULSE WIDTH
t
P
Q
gd
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
V
DS
Q
BV
g(TOT)
t
AV
DSS
t
d(OFF)
90%
V
t
DS
OFF
50%
V
t
f
GS
10%
= 10V
V
DD
90%