FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 5

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
1000
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-80
0.1
C
C
V
OSS
RSS
GS
-40
= 0V, f = 1MHz
≅ C
= C
Junction Temperature
V
GD
DS
DS
T
J
+ C
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
GD
1
Voltage
40
80
C
V
T
ISS
GS
A
10
= C
= 25°C unless otherwise noted
= V
120
GS
DS
o
C)
, I
+ C
D
= 250µA
GD
160
100
200
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 250µA
= 50V
-40
20
T
J
, JUNCTION TEMPERATURE (
Gate Currents
0
Q
g
, GATE CHARGE (nC)
40
40
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
WAVEFORMS IN
DESCENDING ORDER:
80
60
I
I
D
D
= 80A
= 40A
120
o
C)
80
160
200
100