FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 3

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
2000
1000
100
50
0
0.01
0.1
10
2
1
-5
10
V
GS
25
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
= 10V
Ambient Temperature
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
SINGLE PULSE
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
75
10
-4
-4
100
T
A
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
t, PULSE WIDTH (s)
175
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
125
100
75
50
25
0
25
V
GS
= 10V
50
10
10
Case Temperature
-1
-1
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
100
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
CURRENT LIMITED
BY PACKAGE
DM
I = I
= 25
x Z
P
25
10
10
DM
o
θJC
0
0
C
1
125
o
/t
x R
C DERATE PEAK
2
175 - T
t
150
1
θJC
o
C)
t
2
+ T
C
150
C
10
10
1
1
175