FDI3632 Fairchild Semiconductor, FDI3632 Datasheet - Page 4

• Manufacturer Part Number: FDI3632
• Description: MOSFET N-CH 100V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI3632

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
400
100
Figure 5. Forward Bias Safe Operating Area
0.1
10
150
120
1
90
60
30
10
0
9
8
7
6
3.0
1
0
SINGLE PULSE
T
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
Figure 7. Transfer Characteristics
J
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
LIMITED BY r
= MAX RATED
= 25
DD
AREA MAY BE
= 15V
o
C
3.5
V
T
DS
J
V
, DRAIN TO SOURCE VOLTAGE (V)
= 25
GS
20
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
o
C
4.0
I
D
T
Current
, DRAIN CURRENT (A)
J
= 175
10
4.5
o
40
C
V
V
T
GS
GS
A
5.0
= 6V
= 10V
= 25°C unless otherwise noted
T
62
J
= -55
5.5
100
o
C
100µs
10ms
10µs
DC
1ms
200
6.0
80
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
150
120
200
90
60
30
10
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
0
0.01
2.5
2.0
1.5
1.0
0.5
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
-80
t
t
If R = 0
If R ≠ 0
AV
AV
STARTING T
V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
= (L)(I
= (L/R)ln[(I
= 10V
-40
AS
V
)/(1.3*RATED BV
DS
T
J
AS
J
1
= 150
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
t
*R)/(1.3*RATED BV
AV
0
0.1
, TIME IN AVALANCHE (ms)
Capability
o
C
STARTING T
V
40
GS
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
DSS
= 6V
2
- V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
DD
DSS
J
)
= 25
- V
1
V
GS
DD
120
o
C
V
) +1]
= 10V, I
o
V
GS
3
C)
GS
= 5.5V
= 5V
T
160
C
D
= 25
=80A
o
C
200
10
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