FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 102

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Products
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
R
22
10
22
47
10
22
47
10
22
47
1
(KΩ)
4.7
R
47
47
10
10
22
47
10
47
47
22
47
47
–
–
–
–
–
2
Min
100
100
100
100
100
68
68
33
20
30
56
68
30
68
68
56
68
68
2-97
Discrete Power Products –
Max
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
(mA)