FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 87

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bipolar Power Transistors – General Purpose Transistors
TO-126 NPN Configuration
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD157
BD158
KSE340
MJE340
BD159
KSC2690
KSC2690A
BD135
BD137
BD139
BD233
BD375
BD235
BD377
BD237
BD379
KSD882
KSE180
MJE180
BD175
KSD794
KSE181
MJE181
KSD794A
BD179
KSE182
MJE182
Products
I
C
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.5
0.5
1.2
1.2
1.5
1.5
1.5
2
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
3
(A) V
CEO
180
200
250
300
300
120
300
250
300
300
300
350
120
160
45
60
80
45
45
60
60
80
80
30
40
40
45
45
60
60
60
80
80
80
(V) V
CBO
180
200
250
300
300
120
300
275
325
300
300
375
120
160
100
100
100
100
45
60
80
45
50
60
75
40
60
60
45
70
80
80
70
80
(V) V
EBO
5
5
6
6
5
3
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
7
5
5
7
7
5
5
7
7
(V) P
C
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
10
20
20
20
20
20
20
20
25
25
25
25
25
25
10
30
10
10
30
8
5
4
4
7
8
(W)
Min
100
40
40
40
40
40
40
30
30
30
30
30
60
60
40
40
40
40
40
40
40
40
40
60
50
50
40
60
50
50
60
40
50
50
2-82
Discrete Power Products –
Max
320
320
320
120
250
240
240
240
240
240
320
320
250
250
250
375
375
375
400
250
250
250
320
250
250
320
250
250
250
–
–
–
–
–
h
FE
@I
0.01
0.01
0.04
0.04
0.01
0.01
0.01
0.05
0.05
0.05
0.05
0.05
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.3
0.3
0.1
0.1
0.5
0.1
0.1
0.5
0.1
0.1
C
1
Bold = New Products (introduced January 2003 or later)
(A) @V
10
20
20
10
10
10
10
10
10
10
10
CE
5
5
2
2
2
2
2
1
2
1
5
1
5
2
2
2
2
2
1
5
1
2
1
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.12
0.4
0.4
0.3
0.5
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.6
1.2
1.2
0.6
1.5
0.7
0.7
0.5
0.5
0.5
0.6
0.6
0.6
0.5
0.3
0.3
0.8
0.3
0.3
0.8
0.3
0.3
–
–
–
–
–
1
1
1
1
2
2
V
CE (sat)
0.05
0.02
0.05
0.05
0.02
0.03
0.05
0.5
0.5
0.5
0.5
0.5
1.5
0.5
0.5
1.5
0.5
0.5
C
–
–
–
–
–
1
1
1
1
1
1
1
1
2
1
1
(A) @I
0.005
0.002
0.005
0.005
0.002
0.003
0.005
0.05
0.05
0.05
0.05
0.05
0.15
0.05
0.05
0.15
0.05
0.05
0.2
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.1
0.1
B
–
–
–
–
–
(A)