FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 26

MOSFET N-CH 250V 2.8A TO-220

FQP3N25

Manufacturer Part Number
FQP3N25
Description
MOSFET N-CH 250V 2.8A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP3N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQP3N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP3N25
Manufacturer:
FSC
Quantity:
86 755
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SOT-223
FDT439N
NDT453N
NDT451AN
FDT459N
FDT457N
HUF75309T3ST
HUFA75309T3ST
HUF75307T3ST
HUFA75307T3ST
NDT3055
NDT3055L
FQT13N06L
FQT13N06
IRLM120A
IRLM110A
FDT3612
IRFM120A
FQT7N10
FQT7N10L
IRFM110A
FDT461N
IRLM220A
IRLM210A
IRFM220B
FQT4N20L
FQT4N20
IRFM210B
FQT4N25
IRFM214B
SSM1N45B
FQT2P25
SFM9214
FQT3P20
SFM9210
FQT5P10
SFM9110
NDT2955
SOT-223 N-Channel
SOT-223 P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-100
-100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
250
250
450
-60
30
30
30
30
30
55
55
55
55
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.028
0.035
0.035
10V
0.06
0.07
0.07
0.09
0.09
0.11
0.14
0.12
0.35
0.35
1.35
1.75
4.25
1.05
0.1
0.1
0.2
0.4
0.8
1.4
1.5
2.7
1.2
0.3
2
2
4
4
3
R
DS(ON)
0.14@5V
0.22@5V
0.44@5V
0.13@6V
0.38@5V
0.8@5V
1.5@5V
1.4@5V
0.045
0.042
0.055
4.5V
0.05
0.09
0.12
2.5
0.5
Max (Ω) @ V
2-21
0.058
2.5V
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
Q
@V
g
Typ. (nC)
10.7
10.7
10.7
10.2
2.36
10.3
GS
4.2
8.3
4.8
5.8
5.5
5.8
4.6
8.5
6.1
7.2
4.3
8.1
6.5
6.5
6.3
28
19
12
14
13
14
16
12
11
9
4
5
9
6
9
9
= 5V
I
D
1.13
0.77
0.85
0.85
0.77
0.83
0.64
0.55
0.45
0.67
6.3
7.2
6.5
2.6
2.6
2.8
2.8
2.3
1.5
3.7
2.3
1.7
1.7
1.5
0.4
1.1
0.5
0.5
2.5
8
5
3
3
4
4
1
1
(A)
MOSFETs
P
D
1.13
1.1
1.1
1.1
1.1
2.1
2.1
2.7
2.2
2.4
1.8
2.4
2.2
2.2
2.5
2.1
0.9
2.5
1.6
2.5
1.6
2.5
3
3
3
3
3
3
3
3
2
2
2
2
2
2
3
(W)

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