FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 40

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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DIP-8
FQG4902
FQG4904
DIP-8 Complementary N- and P-Channel
Product
250 | -250
400 | -400
Min. (V)
BV
DSS
Complementary
Complementary
Config.
10V
2 | 2
3 | 3
R
DS(ON)
4.5V
–
–
Max (Ω) @ V
2-35
2.5V
–
–
GS
=
1.8V
–
–
Discrete Power Products –
Q
@V
g
7.6 | 20
Typ. (nC)
6 | 12
GS
= 5V
0.54 | 0.54
0.46 | 0.46
I
D
(A)
MOSFETs
P
D
1.4
1.6
(W)