FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 208

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Discrete IGBT (II)
SG H 20 N 120 RUF D
(Continued)
L: Logic Level
LS: Low Saturation
UF: Ultrafast
RUF: Rugged Ultrafast
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D
F: TO-3PF
L: TO-264
M: SOT-223
D, DG3: Built-in FRD
Suffix
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
Fairchild IGBT
2
-PAK
8-15
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