FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 17

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TSSOP-8
FDW2501NZ
FDW2501N
FDW2503NZ
FDW2503N
FDW2510NZ
FDW9926A
FDW2507N
FDW2507NZ
FDW2509NZ
FDW2515NZ
FDW2516NZ
FDW9926NZ
FDW2520C
FDW2521C
FDW256P
FDW2506P
FDW2502P
FDW2504P
FDW264P
FDW254P
FDW254PZ
FDW252P
FDW262P
FDW2508P
FDW258P
TSSOP-8 N-Channel
TSSOP-8 Complementary N- and P-Channel
TSSOP-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
BV
-30
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
20
20
20
20
20
20
DSS
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0135
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.018 | 0.035
0.021 | 0.043
R
DS(ON)
0.0125
4.5V
0.018
0.018
0.021
0.024
0.032
0.019
0.019
0.028
0.032
0.022
0.035
0.043
0.012
0.012
0.047
0.018
0.011
0.02
0.02
0.03
0.02
0.01
2-12
Max (Ω) @ V
0.028 | 0.057
0.035 | 0.07
0.0145
2.5V
0.025
0.028
0.026
0.035
0.032
0.045
0.023
0.023
0.026
0.038
0.045
0.033
0.057
0.015
0.015
0.018
0.065
0.022
0.014
0.04
0.07
–
GS
Bold = New Products (introduced January 2003 or later)
=
0.0215
0.0215
1.8V
Discrete Power Products –
0.03
0.02
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
12 | 9.7
14 | 14
Typ. (nC)
GS
8.2
6.1
5.7
9.7
12
12
20
13
28
14
95
60
13
61
12
12
20
21
60
41
26
9
9
= 5V
5.5 | 3.8
I
6 | 4.4
D
5.5
5.5
5.5
6.4
4.5
7.5
7.5
7.1
5.8
5.8
4.5
5.3
4.4
3.8
9.7
9.2
9.2
8.8
4.5
6
8
6
9
(A)
MOSFETs
P
D
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.3
1.3
1.4
1.3
1.3
1.3
1.3
1
1
1
1
1
1
1
1
1
1
1
(W)