FQP3N25 Fairchild Semiconductor, FQP3N25 Datasheet - Page 119

• Manufacturer Part Number: FQP3N25
• Description: MOSFET N-CH 250V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
Small Signal Transistors – Hybrid Transistors (Continued)
SuperSOT PNP Configuration
FMBS549
FMB3906
FMB857B
FMB200
FMB2907A
FMBA56
Products
V
CEO
30
40
45
45
60
80
(V)
V
CBO
35
40
50
60
60
80
(V)
V
EBO
5
5
5
6
5
4
(V)
Max (A)
0.2
0.1
0.5
0.6
0.5
I
1
C
Min
100
100
220
100
100
100
2-114
Discrete Power Products –
Max
300
300
475
450
300
–
h
FE
@V
10
CE
2
1
5
1
1
(V) @I
C
500
150
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.25
0.4
0.3
0.4
1.6
@I
V
CE (sat)
2000
C
200
500
100
50
10
(mA) @I
B
200
0.5
20
50
10
5
(mA)