ATmega3290P Atmel Corporation, ATmega3290P Datasheet - Page 302

• Manufacturer Part Number: ATmega3290P
• Manufacturer: Atmel Corporation

Specifications of ATmega3290P

• Flash (kbytes): 32 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 20 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 69
• Ext Interrupts: 32
• Usb Speed: No
• Usb Interface: No
• Spi: 2
• Twi (i2c): 1
• Uart: 1
• Segment Lcd: 160
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 2
• Eeprom (bytes): 1024
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8 to 5.5
• Operating Voltage (vcc): 1.8 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 4
• Input Capture Channels: 1
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

27.7
27.7.1
27.7.2
27.7.3
8021G–AVR–03/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
The following algorithm puts the device in Parallel (High-voltage) Programming mode:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Ensure that V
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
0V.
applied to ensure the Prog_enable Signature has been latched.
V
applied to ensure the Prog_enable Signature has been latched.
commands.
CC
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
to 0V.
CC
CC
, and as soon as V
CC
actually reaches 4.5 -5.5V before giving any parallel programming
reaches at least 1.8V within the next 20 µs.
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
CC
Table 27-10 on page 301
and GND.
Table 27-10 on page 301
and GND.
CC
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
(1)
memories plus Lock bits. The Lock bits are
ATmega329P/3290P
to “0000”, RESET pin and V
to “0000”, RESET pin to 0V and
CC
to
302