BLF175 NXP Semiconductors, BLF175 Datasheet - Page 10

Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range

BLF175

Manufacturer Part Number
BLF175
Description
Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Jul 22
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth.
Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.
C1
strap
Fig.14 Component layout for 28 MHz class-A test circuit.
mounting screw
C3
T1
V G
L1
R1
C2
R2
100
C6
strap
10
L2
C4
C5
L3
C7
R3
L4
V DD
C8
MGP074
C9
90
Product specification
BLF175

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