BLF175 NXP Semiconductors, BLF175 Datasheet - Page 18

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BLF175 scattering parameters
V
Note
1. For more extensive s-parameters see internet website:
2003 Jul 22
DS
HF/VHF power MOS transistor
f (MHz)
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast
1000
= 50 V; I
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
10
20
30
40
50
60
70
80
90
5
D
= 100 mA; note 1.
|s
0.86
0.83
0.85
0.88
0.90
0.92
0.94
0.96
0.96
0.97
0.97
0.99
0.99
0.99
1.00
1.00
1.00
0.99
1.00
0.99
0.99
0.99
0.99
0.99
0.99
0.98
11
|
s
11
179.20
177.00
175.10
173.30
171.80
170.10
168.50
165.40
162.30
158.90
155.30
151.80
110.20
139.40
155.70
161.50
164.90
167.10
169.00
170.70
172.20
173.40
174.30
176.50
178.10
179.80
36.90
20.39
|s
9.82
5.96
3.98
2.83
2.11
1.63
1.29
1.04
0.86
0.57
0.40
0.30
0.23
0.15
0.11
0.08
0.07
0.07
0.07
0.07
0.09
0.10
0.12
0.14
21
|
s
21
114.20
93.30
72.60
59.30
49.30
41.90
36.00
31.20
27.40
24.20
21.70
16.40
13.40
11.60
11.00
11.70
16.70
24.10
33.10
42.70
51.90
64.20
70.60
73.80
74.90
76.40
18
|s
0.02
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.00
0.00
0.00
0.01
0.01
0.02
0.02
0.03
0.03
0.04
0.05
0.05
0.06
0.07
0.09
0.10
0.12
0.14
12
|
s
12
25.20
42.50
81.60
88.70
90.70
90.80
90.50
89.60
88.30
88.00
87.80
86.50
84.90
83.10
82.20
80.70
79.80
5.10
13.40
24.70
31.70
35.80
36.80
33.70
23.00
3.30
|s
0.64
0.55
0.60
0.69
0.76
0.82
0.86
0.89
0.91
0.92
0.94
0.95
0.97
0.98
0.98
0.99
0.99
0.99
0.99
0.99
0.99
0.99
0.98
0.98
0.97
0.97
Product specification
22
|
s
BLF175
22
179.80
176.90
174.30
171.90
169.60
167.40
163.10
158.90
154.80
150.60
146.20
112.00
129.30
138.00
144.30
149.30
153.50
157.00
159.90
162.40
164.50
168.80
171.90
174.50
176.70
84.90