BLF175 NXP Semiconductors, BLF175 Datasheet - Page 4

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Jul 22
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
HF/VHF power MOS transistor
GS
SYMBOL
group indication
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
V
I
I
I
I
V
V
V
V
D
D
D
D
D
V
GS
GS
GS
GS
GS
= 100 mA; V
= 10 mA; V
= 10 mA; V
= 1 A; V
= 1 A; V
GS
4
= 0; V
= 10 V; V
= 0; V
= 0; V
= 0; V
= 20 V; V
CONDITIONS
GROUP
DS
DS
GS
DS
DS
DS
W
= 50 V
= 10 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
O
Q
R
U
DS
DS
= 10 V
P
S
T
V
X
Y
Z
DS
GS
DS
= 10 V
= 10 V
= 10 V
= 0
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
125
2
1.1
MIN.
LIMITS
1.6
0.75
5.5
130
36
3.7
TYP.
(V)
Product specification
100
1
4.5
100
1.5
BLF175
MAX. UNIT
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
mV
S
A
pF
pF
pF
A
A