BLF175 NXP Semiconductors, BLF175 Datasheet - Page 6

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-A OPERATION
T
RF performance in SSB operation in a common source circuit.
f
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
2003 Jul 22
handbook, halfpage
1
0 to 8 (PEP)
h
= 28.000 MHz; f
HF/VHF power MOS transistor
= 25 C; R
V
Fig.8
power the values should be decreased by 6 dB.
GS
(pF)
C rs
(W)
150
100
P
= 0; f = 1 MHz.
50
L
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
th mb-h
10
2
(MHz)
= 28.001 MHz.
= 0.3 K/W; unless otherwise specified.
28
f
20
30
V
(V)
50
DS
40
V DS (V)
MGP068
50
(mA)
800
I
DQ
6
typ. 28
(dB)
G
24
p
typ. 44
(dB)
d
3
40
(1)
typ. 64
(dB)
d
5
40
(1)
Product specification
BLF175
R
( )
24
24
GS