BLF175 NXP Semiconductors, BLF175 Datasheet - Page 3

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Jul 22
handbook, halfpage
V
I
P
T
T
R
R
SYMBOL
SYMBOL
D
V
stg
j
DS
tot
th j-mb
th mb-h
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
GS
10
(A)
I D
10
mb
1
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
Fig.2 DC SOAR.
PARAMETER
10
PARAMETER
(2)
V DS (V)
DSon
.
MRA905
10
2
T
mb
25 C
3
handbook, halfpage
CONDITIONS
(1) Continuous operation.
(2) Short-time operation during mismatch.
P tot
(W)
T
T
100
80
60
40
20
mb
mb
0
0
= 25 C; P
= 25 C; P
CONDITIONS
Fig.3 Power derating curves.
40
tot
tot
= 68 W
= 68 W
(1)
(2)
80
65
MIN.
Product specification
120
125
20
4
68
+150
200
VALUE
MAX.
2.6
0.3
T h ( C)
BLF175
MGP063
160
V
V
A
W
C
C
UNIT
UNIT
K/W
K/W