BLF175 NXP Semiconductors, BLF175 Datasheet - Page 12

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Jul 22
handbook, halfpage
handbook, full pagewidth
HF/VHF power MOS transistor
Class-AB operation; V
R
Fig.17 Third order intermodulation distortion as a
f = 28 MHz.
GS
(dB)
d 3
= 22 ; f
20
40
60
output
50
0
0
function of load power; typical values.
1
= 28.000 MHz; f
DS
20
= 50 V; I
C1
C2
2
= 28.001 MHz.
DQ
= 0.15 A;
C3
C4
40
R2
L1
P L (W) PEP
Fig.19 Test circuit for class-AB operation.
V G
MGP078
R1
C5
60
L2
D.U.T.
12
handbook, halfpage
Class-AB operation; V
R
Fig.18 Fifth order intermodulation distortion as a
GS
(dB)
d 5
C6
L3
= 22 ; f
20
40
60
0
0
function of load power; typical values.
1
= 28.000 MHz; f
L4
C7
R3
L6
L5
DS
20
= 50 V; I
2
= 28.001 MHz.
C8
DQ
C10
= 0.15 A;
C11
C9
40
Product specification
P L (W) PEP
C12
MGP080
V D
BLF175
MGP079
output
50
60