BLF175 NXP Semiconductors, BLF175 Datasheet - Page 15

Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range

BLF175

Manufacturer Part Number
BLF175
Description
Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Jul 22
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class-AB operation; V
P
Fig.21 Input impedance as a function of frequency
Class-AB operation; V
P
Fig.23 Power gain as a function of frequency;
L
L
(dB)
= 30 W (PEP); R
= 30 W (PEP); R
( )
G p
Z i
30
20
10
10
20
30
20
10
0
0
0
0
(series components); typical values.
typical values.
GS
GS
10
DS
DS
= 22 .
= 22 .
= 50 V; I
10
= 50 V; I
x i
r i
20
DQ
DQ
= 0.15 A;
= 0.15 A;
20
30
f (MHz)
f (MHz)
MGP083
MGP085
40
30
15
handbook, halfpage
Class-AB operation; V
P
Fig.22 Load impedance as a function of frequency
L
= 30 W (PEP); R
( )
Z L
50
40
30
20
10
0
0
(series components); typical values.
GS
DS
= 22 .
10
= 50 V; I
DQ
R L
X L
= 0.15 A;
20
Product specification
f (MHz)
BLF175
MGP084
30

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