BLF175 NXP Semiconductors, BLF175 Datasheet - Page 7

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Jul 22
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class-A operation; V
R
solid line: T
dotted line: T
Fig.9
Class-A operation; V
P
Fig.11 Power gain as a function of frequency;
L
GS
(dB)
(dB)
= 8 W (PEP); R
G p
G p
40
30
20
10
= 24 ; f
40
30
20
10
0
0
0
0
Power gain as a function of load power;
typical values.
typical values.
h
= 25 C.
h
1
= 70 C.
= 28.000 MHz; f
GS
10
5
DS
DS
= 24 ; f
= 50 V; I
= 50 V; I
1
2
= 28.001 MHz.
DQ
DQ
10
20
f
2
= 1 MHz.
= 0.8 A;
= 0.8 A;
15
30
P L (W) PEP
f (MHz)
MGP069
MGP071
20
40
7
handbook, halfpage
handbook, halfpage
Class-A operation; V
R
solid line: T
dotted line: T
Fig.10 Third order intermodulation distortion as a
Class-A operation; V
P
Fig.12 Third order intermodulation distortion as a
L
GS
(dB)
(dB)
d 3
= 8 W (PEP); R
d 3
= 24 ; f
20
40
60
80
20
40
60
0
0
0
function of load power; typical values.
function of frequency; typical values.
h
= 25 C.
h
1
= 70 C.
= 28.000 MHz; f
GS
10
DS
DS
5
= 24 ; f
= 50 V; I
= 50 V; I
1
2
= 28.001 MHz.
DQ
DQ
10
20
f
2
= 1 MHz.
= 0.8 A;
= 0.8 A;
Product specification
15
30
P L (W) PEP
f (MHz)
BLF175
MGP070
MGP072
20
40