BLF175 NXP Semiconductors, BLF175 Datasheet - Page 5

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Jul 22
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
R DS(on)
V
Fig.4
I
Fig.6
(mV/K)
D
T.C.
DS
( )
= 1 A; V
= 10 V.
1.5
0.5
0
1
2
3
4
5
10
1
0
0
2
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
GS
= 10 V.
50
10
1
100
I D (A)
T j ( C)
MGP064
MGP066
150
1
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
(pF)
GS
C
400
300
200
100
(A)
I D
= 10 V; T
= 0; f = 1 MHz.
0
6
4
2
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
j
= 25 C.
10
20
5
30
C os
C is
V GS (V)
Product specification
40
V DS (V)
BLF175
MGP067
MGP065
10
50