BLF175 NXP Semiconductors, BLF175 Datasheet - Page 11

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-AB OPERATION
T
RF performance in SSB operation in a common source circuit.
f
Notes
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
2. 2-tone efficiency.
Ruggedness in class-AB operation
The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P
single tone under the following conditions:
V
2003 Jul 22
1
handbook, halfpage
h
DS
30 (PEP)
= 28.000 MHz; f
HF/VHF power MOS transistor
= 25 C; R
Class-AB operation; V
R
Fig.15 Power gain as a function of load power;
power the values should be decreased by 6 dB.
= 50 V; f = 28 MHz.
GS
(W)
P
(dB)
G p
L
= 22 ; f
28
26
24
22
20
0
typical values.
th mb-h
1
= 28.000 MHz; f
(MHz)
2
28
f
= 28.001 MHz.
= 0.3 K/W; unless otherwise specified.
DS
20
= 50 V; I
2
= 28.001 MHz.
DQ
V
(V)
= 0.15 A;
50
DS
40
P L (W) PEP
MGP076
(mA)
150
I
DQ
60
typ. 24
(dB)
G
11
p
handbook, halfpage
Class-AB operation; V
R
Fig.16 Two tone efficiency as a function of load
GS
(%)
= 22 ; f
typ. 40
D
60
50
40
30
20
0
(%)
power; typical values.
D
1
(2)
= 28.000 MHz; f
DS
typ. 35
(dB)
20
= 50 V; I
d
3
(1)
2
= 28.001 MHz.
DQ
= 0.15 A;
typ. 40
(dB)
40
Product specification
d
P L (W) PEP
5
(1)
BLF175
MGP077
60
L
R
( )
22
= 30 W
GS