BLF175 NXP Semiconductors, BLF175 Datasheet - Page 13

• Manufacturer Part Number: BLF175
• Description: Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
List of components (class-AB test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (
2003 Jul 22
C1, C10
C2, C4, C8, C11
C3
C5, C6, C9
C7
C12
L1
L2, L3
L4
L5
L6
R1
R2
R3
HF/VHF power MOS transistor
COMPONENT
thickness 1.6 mm.
multilayer ceramic chip capacitor
(note 1)
film dielectric trimmer
multilayer ceramic chip capacitor
(note 1)
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
(note 1)
aluminium electrolytic capacitor
9 turns enamelled 1 mm copper wire 280 nH
stripline (note 2)
14 turns enamelled 1 mm copper
wire
10 turns enamelled 1 mm copper
wire
grade 3B Ferroxcube wideband RF
choke
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
DESCRIPTION
13
62 pF
5 to 60 pF
51 pF
100 nF
10 pF
10 F, 63 V
30
1650 nH
380 nH
22
1 M
10
VALUE
length 11 mm;
int. dia. 6 mm;
leads 2
length 10 mm;
width 6 mm
length 20 mm;
int. dia. 12 mm;
leads 2
length 13 mm;
int. dia. 7 mm;
leads 2
DIMENSIONS
4 mm
2 mm
3 mm
2222 809 07011
2222 852 47104
2222 030 28109
4312 020 36640
Product specification
CATALOGUE NO.
r
= 4.5),
BLF175